Please note: All IR LED specifications are subject to change without notice. These IR LEDs are fabricated from III-V heterostructures grown onto InAs substrates. Optical immersion of lens with flip-chip devices enables three to five fold increase of output power.

Features

• Low power consumptions (µW to mW range)
• Angle of emittance  <40°
• Switching time: 10 ns (typical), 20 ns (max)
• Narrow bandwidth: FWHM = 0.1 to 0.2 λ_max
• Wide operating temperature range

Specifications (@T=22 °C)

• Peak wavelength, λ, µm: 3.4 ± 0.05
• Pulsed power I=1 A, P_pulsed, mW: > 6.0±1.2
• CW power at I=200 mA, P_CW, mW: >1.0±0.2
• Switching time, ns: ≤20
• Thread: M5x0.5
• Emission size, mm: 3.3 diameter
• Far-field pattern, FWHM, °: ≤20
• Operating (storage) conditions, °C: -25 to +60 (+80)

Datasheet is available in pdf format:

LED34Sr datasheet