5.5 µm optically immersed LED
Please contact us for further information on this product.
Please note: All IR LED specifications are subject to change without notice.
These IR LEDs are fabricated from III-V heterostructures grown onto InAs substrates. Optical immersion of lens with flip-chip devices enables three to five fold increase of output power.
Features
- Low power consumptions (µW to mW range)
- Angle of emittance <40°
- Switching time: 10 ns (typical), 20 ns (max)
- Narrow bandwidth: FWHM = 0.1 to 0.2 λmax
- Wide operating temperature range
Specifications (@T=22 °C)
- Peak wavelength, λ, µm: 5.5 ± 0.05
- Pulsed power I=1 A, Ppulsed, mW: > 6.0±1.2
- CW power at I=200 mA, PCW, mW: >1.0±0.2
- Switching time, ns: ≤20
- Thread: M5x0.5
- Emission size, mm: 3.3 diameter
- Far-field pattern, FWHM, °: ≤20
- Operating (storage) conditions, °C: -25 to +60 (+80)
The datasheet for the LED55Sr optically immersed LED is available in pdf format:
LED55Sr datasheet