These IR sources are based on silicon carbide and silicon nitride to operate at higher temperatures and give higher output powers
Please contact us for further information on this product.
Features
- Robust and Efficient
- High Output and High Temperature
- Long Life, Stable Properties
- Parabolic and Elliptical Reflectors available
- Does not require operation in a sealed atmosphere
- Supplied with leads for power input
The IR-Si Series are designed for those customers who require higher temperatures and greater output from their infrared source. These emitters are manufactured using a patented silicon nitride and silicon carbide material. The advanced ceramic technology ensures a very stable product. Their robust design ensures intrinsic physical and thermal strength.
The IR-Si emitters can be supplied with parabolic reflectors for extremely efficient collimation of energy and complimented with windows for particular transmitting range, as well as with elliptical reflectors.
| IR-Si207 | IR-Si217 | IR-Si253 | IR-Si272 | IR-Si295 | IR-Si311 | |
| Voltage, V | 12.0 | 24.0 | 12.0 | 6.0 | 12.0 | 12.0 |
| Temperature °C | 1375 | 1385 | 1170 | 1160 | 1200 | 1025 |
| Current, A | 2.0 | 1.5 | 1.6 | 5.0 | 3.3 | 5.8 |
| Power, W | 24.0 | 37.0 | 20.0 | 30.0 | 40.0 | 70.0 |
| Life, Hours at Typical V | 5,000+ | 5,000+ | 5,000+ | 5,000+ | 5,000+ | 5,000+ |
| Emissivity, % | 80 | 80 | 80 | 80 | 80 | 80 |
| Active Area, mm | 3 (L) x 4.4 (W) | 6 (W) x 4.4 (L) | 2 (D) x 5 (L) | 2.8 (D) x 5 (L) | 3.5 (D) x 12 (L) | 4.5 (D) x 17 (L) |
| Material | Silicon Carbide | Silicon Carbide | Silicon Nitride | Silicon Nitride | Silicon Nitride | Silicon Nitride |
An interactive pdf data sheet is available for all Hawkeye IR sources ( 8 MB ):