Broad band (Al)GaN based UV photodiode A = 0,076 mm2, in ultra compact 1608 SMD housing
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Properties of the AGA38S-SMD-S UV photodiode
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· Broad Band UVA+UVB+UVC photodiode
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· Active Area A = 0,076 mm2
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· 1608 SMD ultra small housing Si window
- · 10 mW/cm2 peak radiation results a current of approx. 700 nA
About the material (Aluminium)Gallium Nitride (Al)GaN
(Al)GaN is a new semiconductor material for visible blind UV photodiodes. By modification of the Al – to – Ga stoichiometry it is possible to produce photodiodes with different spectral behaviour. This allows photodiodes to be offered which are suitable for broad band UV (UVA+UVB+UVC), for UVB-only or for UVC only, without using a filter.
The datasheet for the AG38AS-SMD-S is available in pdf format: